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Two dimensional quantum and reliability modelling for lightly doped nanoscale devices

The downscaling of MOSFET devices leads to well-studied short channel effects and more complex quantum mechanical effects. Both quantum and short channel effects not only alter the performance but they also affect the reliability. This continued scaling of the MOS device gate length puts a demand on...

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Bibliographic Details
Main Author: ElKashlan, Rana
Format: Thesis
Published: AUC Knowledge Fountain 2018
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