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Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN
Dissertation (MSc)--University of Pretoria, 2006.
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University of Pretoria
2013
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| _version_ | 1867613526444474368 |
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| access_status_str | Open Access |
| author2 | Kunert, Herbert W. |
| author_browse | Kunert, Herbert W. |
| author_facet | Kunert, Herbert W. |
| collection | Thesis |
| dc_rights_str_mv | © 2002, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MSc)--University of Pretoria, 2006. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/24152 |
| institution | University of Pretoria (South Africa) |
| last_indexed | 2026-06-10T12:37:33.114Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2013 |
| publishDateRange | 2013 |
| publishDateSort | 2013 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/24152 Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN Kunert, Herbert W. upetd@up.ac.za Maremane, Martin Koena Photoluminescence Rama spectroscopy Raman effect Semiconductors optical properties Doped semiconductors UCTD Dissertation (MSc)--University of Pretoria, 2006. The presence of the hydrogen complex in Mg-doped GaN poses serious threats for the technological development of blue and ultraviolet light- emitting diodes and lasers. Since hydrogen is a difficult element to work with and it is incorporated into GaN through various mechanisms, a thorough understanding of hydrogen in GaN and other nitrides is essential to meet potential challenges by hydrogen. Most of the work done on the interaction of hydrogen implanted Mg-doped GaN deals mainly with passivation of the dopants and formation of the hydrogen complex with magnesium. However, the role of hydrogen implantation on the optical properties of Mg-doped GaN is not well understood. This study is mainly about optical properties of Mg-doped GaN and the effects of hydrogen on the Mg-doped GaN. Theoretically, group theory is used to determine the total number of symmetry allowed modes in GaN, Raman active modes and possible overtones. Experimentally, Raman and photoluminescence spectroscopy verify the theoretical results. Physics unrestricted 2013-09-06T16:46:48Z 2005-05-05 2013-09-06T16:46:48Z 2004-04-20 2006-05-05 2005-04-26 Dissertation Maremane, MK 2002, Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/24152 > H657/ag http://hdl.handle.net/2263/24152 http://upetd.up.ac.za/thesis/available/etd-04262005-132719/ © 2002, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | Photoluminescence Rama spectroscopy Raman effect Semiconductors optical properties Doped semiconductors UCTD Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title | Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title_full | Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title_fullStr | Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title_full_unstemmed | Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title_short | Raman and photoluminescence spectroscopy from magnesium doped, as grown, hydrogen implanted and annealed GaN |
| title_sort | raman and photoluminescence spectroscopy from magnesium doped as grown hydrogen implanted and annealed gan |
| topic | Photoluminescence Rama spectroscopy Raman effect Semiconductors optical properties Doped semiconductors UCTD |
| url | http://hdl.handle.net/2263/24152 http://upetd.up.ac.za/thesis/available/etd-04262005-132719/ |