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Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates

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Published in:Electronics Letters
Format: Online Article RSS Article
Published: 2026
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container_title Electronics Letters
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discipline_display Electronics
discipline_facet Electronics
format Online Article
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genre Journal Article
id rss_article:102228
institution FRELIP
journal_source_facet Electronics Letters
last_indexed 2026-07-12T03:35:37.330Z
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
Electronics
General
Electronics
sub_discipline_display General
sub_discipline_facet General
subject_display Electronics
General
Electronics
subject_facet Electronics
General
Electronics
title Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_alt Tensión de ruptura superior a 2 kV en HEMTs de AlGaN/GaN planar normalmente apagados sobre sustratos de Si
Tension de claquage dépassant 2 kV dans les HEMTs AlGaN/GaN planaires normalement bloquants sur substrats Si
Tensão de Ruptura Superior a 2 kV em HEMTs Planares AlGaN/GaN Normalmente Desligados em Substratos de Si
title_auth Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_es_txt Tensión de ruptura superior a 2 kV en HEMTs de AlGaN/GaN planar normalmente apagados sobre sustratos de Si
title_fr_txt Tension de claquage dépassant 2 kV dans les HEMTs AlGaN/GaN planaires normalement bloquants sur substrats Si
title_full Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_fullStr Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_full_unstemmed Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_pt_txt Tensão de Ruptura Superior a 2 kV em HEMTs Planares AlGaN/GaN Normalmente Desligados em Substratos de Si
title_short Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates
title_sort breakdown voltage exceeding 2 kv in normally‐off planar algan/gan hemts on si substrates
topic Electronics
General
Electronics
url https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.70642?af=R