Full Text Available
Note: Clicking the button above will open the full text document at the original institutional repository in a new window.
Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
Saved in:
| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2025
|
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|
| _version_ | 1864030189734854661 |
|---|---|
| collection | WordPress RSS FRELIP Feed Integration |
| container_title | IEEE Journal of the Electron Devices Society |
| description | |
| discipline_display | Technology & Engineering |
| discipline_facet | Technology & Engineering |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:31129 |
| institution | FRELIP |
| journal_source_facet | IEEE Journal of the Electron Devices Society |
| publishDate | 2025 |
| publishDateSort | 2025 |
| record_format | rss_article |
| spellingShingle | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights Electronics Technology & Engineering — Aerospace & Applied Tech Technology & Engineering |
| sub_discipline_display | Technology & Engineering — Aerospace & Applied Tech |
| sub_discipline_facet | Technology & Engineering — Aerospace & Applied Tech |
| subject_display | Electronics Technology & Engineering — Aerospace & Applied Tech Technology & Engineering Electronics Technology & Engineering — Aerospace & Applied Tech Technology & Engineering |
| subject_facet | Electronics Technology & Engineering — Aerospace & Applied Tech Technology & Engineering |
| title | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_auth | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_full | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_fullStr | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_full_unstemmed | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_short | Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights |
| title_sort | reliability of alscn/gan hemts under pulsed measurements and htrb step-stress tests: experimental and tcad insights |
| topic | Electronics Technology & Engineering — Aerospace & Applied Tech Technology & Engineering |
| url | http://ieeexplore.ieee.org/document/11282436 |