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Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2026
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:31135
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
sub_discipline_display Technology & Engineering — Aerospace & Applied Tech
sub_discipline_facet Technology & Engineering — Aerospace & Applied Tech
subject_display Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
subject_facet Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
title Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_auth Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_full Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_fullStr Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_full_unstemmed Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_short Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
title_sort repetitive gate-hbm-esd-induced vth degradation for rf gan hemt with matching networks
topic Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
url http://ieeexplore.ieee.org/document/11352435