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Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2026
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:31136
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
sub_discipline_display Technology & Engineering — Aerospace & Applied Tech
sub_discipline_facet Technology & Engineering — Aerospace & Applied Tech
subject_display Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
subject_facet Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
title Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_auth Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_full Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_fullStr Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_full_unstemmed Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_short Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
title_sort enhancing ultraviolet responsivity of gan p-i-n photodetectors through full depletion thin-layer doping-induced carrier transport modulation
topic Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
url http://ieeexplore.ieee.org/document/11347526