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Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2026
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:31138
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
sub_discipline_display Technology & Engineering — Aerospace & Applied Tech
sub_discipline_facet Technology & Engineering — Aerospace & Applied Tech
subject_display Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
subject_facet Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
title Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_auth Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_full Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_fullStr Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_full_unstemmed Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_short Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
title_sort research on degradation of p-finfet under mixed nbti and hcd stress
topic Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
url http://ieeexplore.ieee.org/document/11347527